A study of grown-in-impurities in silicon by deep-level transient spectroscopyROHATGI, A; DAVIS, J. R; HOPKINS, R. H et al.Solid-state electronics. 1983, Vol 26, Num 11, pp 1039-1051, issn 0038-1101Article

Dopant states in α-Si:H. I: Tight-binding-model resultsROBERTSON, J.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4647-4657, issn 0163-1829Article

Additional structure in infrared excitation spectra of group-III acceptors in siliconFISCHER, D. W; ROME, J. J.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4826-4832, issn 0163-1829Article

Ion mixing of markers in SiO₂ and SiBARCZ, A. J; PAINE, B. M; NICOLET, M.-A et al.Applied physics letters. 1984, Vol 44, Num 1, pp 45-47, issn 0003-6951Article

Hydrogen passivation of deep metal-related donor centers in germaniumPEARTON, S. J; TAVENDALE, A. J.Journal of applied physics. 1983, Vol 54, Num 2, pp 820-823, issn 0021-8979Article

Study of Ge₂S₃ glass undoped and doped with metals by positron annihilation techniqueKOBRIN, B. V; SHANTAROVICH, V. P.Physica status solidi. A. Applied research. 1984, Vol 83, Num 1, pp 159-164, issn 0031-8965Article

Extinction de la luminescence des ions d'europium dans l'orthoborate d'yttrium par certains éléments p et fDOTSENKO, V. P; ZLOTNIKOVA, N. N; SMIRDOVA, N. I et al.Žurnal fizičeskoj himii. 1984, Vol 58, Num 3, pp 743-745, issn 0044-4537Article

Luminescence in trilanthanumtrichlorotungstate (La₃WO₆Cl₃)BLASSE, G; DIRKSEN, G. J; BRIXNER, L. H et al.Journal of solid state chemistry (Print). 1983, Vol 46, Num 3, pp 294-305, issn 0022-4596Article

The effect of oxide additions on the electrical conductivity of the low-temperature form of Ta₂O₅JOHANNESEN, O; KOFSTAD, P.The Journal of physics and chemistry of solids. 1984, Vol 45, Num 3, pp 239-250, issn 0022-3697Article

Transition metal diffusion in InP: photoluminescence investigationSKOLNICK, M. S; FOULKES, E. J; TUCK, B et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 2951-2961, issn 0021-8979Article

Dependence of refractive indexes dispersion for LiNbO₃ on impurityBODNAR, I. T; YARUNICHEV, V. P.Crystal research and technology (1979). 1983, Vol 18, Num 9, pp 1161-1164, issn 0232-1300Article

The effect of thermal unpinning of dislocations on stability of colour centres in microcrystalline powders of alkali halidesDESHMUKH, B. T; BATRA, K. K; MOHARIL, S. V et al.Crystal lattice defects and amorphous materials. 1983, Vol 10, Num 2, pp 119-122Article

Spectrométrie de masse à ions secondaires des amas d'ions provenant du système «impureté-matrice»GUR'YANOV, G. M; KOVARSKIJ, A. P.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 7, pp 1400-1402, issn 0044-4642Article

Hjalmarson-Frenkel core excitonic resonances at III-V semiconductor surfaceMARSH, C. P; DOW, J. D; ALLEN, R. E et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 2, pp 957-964, issn 0163-1829Article

Intermetallic charge-transfer spectra of copper(I)-metal(III) centers in doped crystals of CsMgCl₃MCPHERSON, G. L; MCPHERSON, A. M; WEN-AN LOONG et al.Journal of the American Chemical Society. 1984, Vol 106, Num 2, pp 324-328, issn 0002-7863Article

Vibrational properties of amorphous alloysLUCOVSKY, G; POLLARD, W. B.Topics in applied physics. 1984, Vol 56, pp 301-355, issn 0303-4216Article

The effect of 3d-transition metal solutes on the ferrimagnetism of Fe₇Se₈TERZIEFF, P.The Journal of physics and chemistry of solids. 1983, Vol 44, Num 2, pp 125-128, issn 0022-3697Article

Solid-state exciplex formation: a mechanism of energy trapping in uphill doped crystalsBERKOVIC, G. E; COHEN, M. D; LUDMER, Z et al.Chemical physics. 1983, Vol 82, Num 3, pp 405-412, issn 0301-0104Article

Polarisation de la photoluminescence d'impureté des cristaux de CdSiAs2RUD, YU. V.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 12, pp 2208-2211, issn 0015-3222Article

Trigonal hydrogen-related acceptor complexes in germaniumKAHN, J. M; MCMURRAY, R. E. JR; HALLER, E. E et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 15, pp 8001-8014, issn 0163-1829Article

Deep level effects in silicon and germanium after plasma hydrogenationPEARTON, S. J; KAHN, J. M; HALLER, E. E et al.Journal of electronic materials. 1983, Vol 12, Num 6, pp 1003-1014, issn 0361-5235Article

Electronic properties of a-Si:H and a-Si:F films produced by ion implantationBOHRINGER, K; LIU, U. H; KALBITZER, S et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 33, pp L1187-L1192, issn 0022-3719Article

Point-defect mobility in thallous chloride doped with divalent cation and anion impuritiesCORISH, J; PARKER, B. M. C; QUIGLEY, J. M et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 15, pp 2689-2704, issn 0022-3719Article

Theory of deep electronic levels of large chalcogen (S,Se, and Te) complexes in SiJANSEN, R. W; SANKEY, O. F.Physical review. B, Condensed matter. 1986, Vol 33, Num 6, pp 3994-4001, issn 0163-1829Article

Effect of impurities on the diffusion-controlled creep activation energy in MgOCRAMPON, J; ESCAIG, B.Journal of materials science. 1983, Vol 18, Num 8, pp 2283-2289, issn 0022-2461Article